21 August 1987 A-Si:H Device Characterization Using Transient Response Measurements
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940163
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Several time-resolved experimental techniques have been applied to a-Si:H based thin films and diodes to determine carrier ranges, junction field profiles and charge storaae times. The results on p-i-n type diodes are compared to a theoretical model of a-Si:H so-lar cells. Electrochemical surface treatment of Schottky-barrier type devices indicates that improved carrier transport is obtained for interfaces from which oxide related defects are removed. For the case of thin a-SiC:H alloy films it is shown that deep trapping gives rise to significant space charge build-up which can be used for charge storage applications.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rolf Konenkamp, Rolf Konenkamp, } "A-Si:H Device Characterization Using Transient Response Measurements", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940163; https://doi.org/10.1117/12.940163
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