21 August 1987 Density Of States Of Amorphous Semiconductors
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940152
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
The problems of defining an electronic density of states for amorphous semiconductors are summarized. A new equilibrium statistical-mechanical model for the structure and electronic properties of disordered systems is discussed and applied to the case of hydrogenated amorphous silicon (a-Si:H). The difficulty in treating non-equilibrium effects is briefly analyzed, and some of the unresolved controversies with regard to the density of states in a-Si:H are enumerated.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Adler, David Adler, } "Density Of States Of Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940152; https://doi.org/10.1117/12.940152
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