21 August 1987 Density Of States Of Amorphous Semiconductors
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940152
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
The problems of defining an electronic density of states for amorphous semiconductors are summarized. A new equilibrium statistical-mechanical model for the structure and electronic properties of disordered systems is discussed and applied to the case of hydrogenated amorphous silicon (a-Si:H). The difficulty in treating non-equilibrium effects is briefly analyzed, and some of the unresolved controversies with regard to the density of states in a-Si:H are enumerated.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David Adler, David Adler, "Density Of States Of Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940152; https://doi.org/10.1117/12.940152

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