21 August 1987 Effect Of Chemical Doping And Alloying On The Deep Gap Dos In Glassy Chalcogenides From Analysis Of Electrophotographic Potentials
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940164
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
The isothermal dark decay of open circuit surface voltage measured on a composition series (0-14 at % Te) of capacitively charged glassy Se:Te alloy films is analyzed and compared with similar measurements on halogen and alkali doped a-Se films. It is demonstrated that in both materials systems dark decay is controlled by thermal emission of one carrier type from states (emission centers) deep in the mobility gap leading to the progressive buildup of a uniform deeply trapped space charge of opposite sign -a process called depletion discharge. From analysis of the parameters of the depletion discharge process compositionally induced changes in dark decay can be related directly to changes in the density of states (DOS) controlling emission. Whereas alloying of Se with Te is thus found to induce major alteration of the DOS wrt Se the doping of Se operates to specifically alter only the relative populations of certain discrete states near midgap. The experiments further indicate that the mechanism of doping involves the interaction of dopant atoms with native alternatively charged and diamagnetic defect pairs.
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M. Abkowitz, M. Abkowitz, "Effect Of Chemical Doping And Alloying On The Deep Gap Dos In Glassy Chalcogenides From Analysis Of Electrophotographic Potentials", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940164; https://doi.org/10.1117/12.940164
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