21 August 1987 Influence Of Density Of States Distribution And Trapping Rates On The Transient Response In Amorphous Semiconductors
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940162
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
A discrete version of the multiple trapping transport model for amorphous semiconductors is presented and its application to transient photocurrents demonstrated. The relationship between the average energy of a thermalizing carrier distribution and the demarcation energy of the TROK formalism is discussed in connection with structured density of states distributions. A novel way to calculate the transit time in a time-of-flight simulation is introduced and subsequently used to examine drift mobilities for various a-Si:H inspired density of states models.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. J. Adriaenssens, G. J. Adriaenssens, G. Seynhaeve, G. Seynhaeve, H. Michiel, H. Michiel, } "Influence Of Density Of States Distribution And Trapping Rates On The Transient Response In Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940162; https://doi.org/10.1117/12.940162
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