Light And Electron Irradiation Effects In Sputtered A-Si:H

S. Gangopadhyay; B. Schroder; J. Geiger

doi:10.1117/12.940160

21 August 1987 Light And Electron Irradiation Effects In Sputtered A-Si:H

S. Gangopadhyay, B. Schroder, J. Geiger

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940160
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

We have studied the effect of light and electron irradiation on the density of states (DOS) of intrinsic a-Si:H films prepared by magnetron sputtering. The DOS of the films prepared under optimum conditions was obtained by space-charge-limited current method. The generation of metastable defects by light soaking and KeV electron irradiation has been directly observed by the change in the DOS. The defect creation by electrons is a factor of 3300 higher than that of light for the same deposition energy. Also the generation process is found to be different.

Citation Download Citation

S. Gangopadhyay, B. Schroder, and J. Geiger "Light And Electron Irradiation Effects In Sputtered A-Si:H", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940160

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