21 August 1987 Self-Consistent Modeling Of Amorphous Silicon Devices
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940167
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
We have developed a computer model to describe the steady-state behaviour of a range of amorphous silicon devices. It is based on the complete set of transport equations and takes into account the important role played by the continuous distribution of localized states in the mobility gap of amorpl iL,us silicon. Using one set of parameters we have been able to self-consistently simulate the current-voltage characteristics of p-i-n ( or n-i-p) solar cells under illumination, the dark behaviour of field-effect transistors, p-i-n diodes and n-i-n diodes in both the ohmic and space-charge limited regimes. This model also desribes the steady-state photoconductivity of amorphous silicon, in particular, its dependence on temperature, doping and illumination intensity.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Hack, "Self-Consistent Modeling Of Amorphous Silicon Devices", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940167; https://doi.org/10.1117/12.940167
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