We have developed a computer model to describe the steady-state behaviour of a range of amorphous silicon devices. It is based on the complete set of transport equations and takes into account the important role played by the continuous distribution of localized states in the mobility gap of amorpl iL,us silicon. Using one set of parameters we have been able to self-consistently simulate the current-voltage characteristics of p-i-n ( or n-i-p) solar cells under illumination, the dark behaviour of field-effect transistors, p-i-n diodes and n-i-n diodes in both the ohmic and space-charge limited regimes. This model also desribes the steady-state photoconductivity of amorphous silicon, in particular, its dependence on temperature, doping and illumination intensity.
"Self-Consistent Modeling Of Amorphous Silicon Devices", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940167; https://doi.org/10.1117/12.940167