21 August 1987 Submicron Device Physics For Numerical Simulations
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940169
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Recent advances in physics for submicron, bipolar-crystalline devices suggest principles that are valid when modeling bipolar devices with noncrystalline regions such as those with polysilicon, polycrystalline silicon, and hydrogenated amorphous silicon emitters. These principles from crystalline device physics are summarized, and their implications for the noncrystalline regions of bipolar devices are given.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herbert S. Bennett, Herbert S. Bennett, } "Submicron Device Physics For Numerical Simulations", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940169; https://doi.org/10.1117/12.940169

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