21 August 1987 The Distribution Of Deep States In Hydrogenated Amorphous Silicon
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940158
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
The distribution of deep states in undoped a-Si:H is investigated. For this purpose, a new experimental technique is introduced which is based on the principle of thermally-stimulated space-charge relaxation. A peak in the density of states is resolved at - 0.6 eV below the mobility edge of the conduction band. The energy position and magnitude of this peak are found to be consistent with space-charge-limited current measurements.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Snow, "The Distribution Of Deep States In Hydrogenated Amorphous Silicon", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940158; https://doi.org/10.1117/12.940158
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