Transient photocurrent techniques for the characterization of amorphous semiconductors are reviewed; the techniques are based on the assumption that the photocarrier dynamics have the multiple-trapping form. The application of these techniques to five properties of defects in amorphous hydrogenated silicon (a-Si:H) are reviewed. The five properties are: the attempt-to-escape frequency, the photocarrier diffusion length, the total trap density, the capture coefficient-diffusion constant ratio, and the density of states. A discussion of the role of time-of-flight determinations in transient photocurrent characterization is given.
E. A. Schiff,
"Transient Photocurrent Characterization Of Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940157; https://doi.org/10.1117/12.940157