21 August 1987 Transient Photocurrent Characterization Of Amorphous Semiconductors
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987); doi: 10.1117/12.940157
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Transient photocurrent techniques for the characterization of amorphous semiconductors are reviewed; the techniques are based on the assumption that the photocarrier dynamics have the multiple-trapping form. The application of these techniques to five properties of defects in amorphous hydrogenated silicon (a-Si:H) are reviewed. The five properties are: the attempt-to-escape frequency, the photocarrier diffusion length, the total trap density, the capture coefficient-diffusion constant ratio, and the density of states. A discussion of the role of time-of-flight determinations in transient photocurrent characterization is given.
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E. A. Schiff, "Transient Photocurrent Characterization Of Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940157; https://doi.org/10.1117/12.940157
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KEYWORDS
Electrodes

Amorphous semiconductors

Diffusion

Physics

Electron transport

Data modeling

Spectroscopy

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