21 August 1987 Transient Photocurrent Characterization Of Amorphous Semiconductors
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Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940157
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Transient photocurrent techniques for the characterization of amorphous semiconductors are reviewed; the techniques are based on the assumption that the photocarrier dynamics have the multiple-trapping form. The application of these techniques to five properties of defects in amorphous hydrogenated silicon (a-Si:H) are reviewed. The five properties are: the attempt-to-escape frequency, the photocarrier diffusion length, the total trap density, the capture coefficient-diffusion constant ratio, and the density of states. A discussion of the role of time-of-flight determinations in transient photocurrent characterization is given.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. A. Schiff, "Transient Photocurrent Characterization Of Amorphous Semiconductors", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); doi: 10.1117/12.940157; https://doi.org/10.1117/12.940157

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