25 August 1987 A Study Of The Dissolution Kinetics If A Positive Photoresist Using Organic Acids To Simulate Exposed Photoactive Compounds
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Abstract
The dissolution kinetics of a positive photoresist have been simulated using mixtures of an organic carboxylic acid and a photoactive compound (PAC) to mimic the partially exposed PAC in the photoresist. The dissolution rate of the novolac resin film was 200 A/s. When acid was added to the resin at a resin/acid ratio of 6/1, the dissolution rate of the film increased as much as four-fold depending on the acid used. The dissolution rate of a resist containing the PAC, a 2,1,4-diazonaphthoquinone monoester, was obtained as a function of inhibitor concentration M. The M values were then simulated by replacing the amount of exposed PAC in the resist with an acid (i.e. for M= 0.6, the "PAC" would consist of 40% acid + 60% PAC). The dissolution rates of the films containing 2-naphthoic and 4-t-butylbenzoic acid matched those of the exposed resist quite closely. The dissolution rates of the films containing the acid of the photolyzed PAC were much higher than those of the exposed resist.
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Lauren Blum, Lauren Blum, Mariorie E. Perkins, Mariorie E. Perkins, Andrew W. McCullough, Andrew W. McCullough, } "A Study Of The Dissolution Kinetics If A Positive Photoresist Using Organic Acids To Simulate Exposed Photoactive Compounds", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940319; https://doi.org/10.1117/12.940319
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