25 August 1987 Computer Simulation Of The Percolational Development And Pattern Formation In Pulsed Laser Exposed Positive Photoresists
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Abstract
The exposure of positive photoresists like AZ-2400 and AZ-2415 with pulsed excimer XeCl laser (λ= 308 nm) results in a thresholdlike growth of sensitivity and contrast of the resists [1]. The effect appears when pulse energy density W is in interval 3.106 - 5.106W/cm2, which is little lower than the ablation threshold of the resists - W = 5.10 W/cm2. We called exposure in this interval of W as preablation mode of exposure.
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A. L. Bogdanov, A. L. Bogdanov, A. A. Polyakov, A. A. Polyakov, K. A. Valiev, K. A. Valiev, L. V. Velikov, L. V. Velikov, D. Yu. Zaroslov, D. Yu. Zaroslov, } "Computer Simulation Of The Percolational Development And Pattern Formation In Pulsed Laser Exposed Positive Photoresists", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940322; https://doi.org/10.1117/12.940322
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