Computer Simulation Of The Percolational Development And Pattern Formation In Pulsed Laser Exposed Positive Photoresists

A. L. Bogdanov; A. A. Polyakov; K. A. Valiev; L. V. Velikov; D. Yu. Zaroslov

doi:10.1117/12.940322

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25 August 1987 Computer Simulation Of The Percolational Development And Pattern Formation In Pulsed Laser Exposed Positive Photoresists

A. L. Bogdanov, A. A. Polyakov, K. A. Valiev, L. V. Velikov, D. Yu. Zaroslov

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Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940322
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The exposure of positive photoresists like AZ-2400 and AZ-2415 with pulsed excimer XeCl laser (λ= 308 nm) results in a thresholdlike growth of sensitivity and contrast of the resists [1]. The effect appears when pulse energy density W is in interval 3.10⁶ - 5.10⁶W/cm2, which is little lower than the ablation threshold of the resists - W = 5.10 W/cm². We called exposure in this interval of W as preablation mode of exposure.

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A. L. Bogdanov, A. A. Polyakov, K. A. Valiev, L. V. Velikov, and D. Yu. Zaroslov "Computer Simulation Of The Percolational Development And Pattern Formation In Pulsed Laser Exposed Positive Photoresists", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940322

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