With the increasing use of dry processes for etching silicon, silicon dioxide, aluminum, and other materials, the enhancement of etch resistance of resist images in such severe dry processing conditions becomes an important issue. This is particularly so in cases where both high resist sensitivity and high reactive ion etch (RIE) resistance are required. This paper describes the enhancement of RIE resistance of conventional resists by incorporating aluminum, magnesium or silicon into resist images. The process has been carried out in vapor phase and/or in liquid phase. In some cases, resist solutions were mixed with certain organometallic materials to give wet developable resist films which exhibit enhanced resistance without any further processing.
H. Hiraoka, H. Hiraoka,
"Enhancement Of RIE Resistance Of Conventional Resist Materials", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940323; https://doi.org/10.1117/12.940323