25 August 1987 High Resolution Positive Photoresist For Submicron Photolithography
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Optical lithography is achieving itself into submicron region. In the limitation of resolution for stepper there is a decrease in contrast and so it requires more exposure amount than that of D. Also it is not possible to achieve faithful transcription of fine pattern dimension. The resolution of TSMR-8800 which is developed as high resolution positive photoresist is 0.6 μm. Faithful transcription of the mask pattern is possible for 0.7 μm line and space pattern. It shows good properties compared with conventional photoresist.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidekatsu Kohara, Hidekatsu Kohara, Hatsuyuki Tanaka, Hatsuyuki Tanaka, Masanori Miyabe, Masanori Miyabe, Yoshiaki Arai, Yoshiaki Arai, Shingo Asaumi, Shingo Asaumi, Toshimasa Nakayama, Toshimasa Nakayama, } "High Resolution Positive Photoresist For Submicron Photolithography", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940344; https://doi.org/10.1117/12.940344

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