25 August 1987 Langmuir-Blodgett Films For Half Micron Lithography Using Krf Excimer Laser And X-Ray
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Abstract
For photo-resist in the semiconductor photo-lithography, the study was extended to five LB-Films for KrF Excimer (EX) Laser, i.e. three fatty acids of Diacetylene derivatives (Diynoic acids), w-Tricocynoic acid, and Octadecylacrylic acid, and other three LB-Films for X-ray, i.e. Arachidic acid, w-Tricosenoic acid, and w-Tricocynoic acid. In terms of the pattern shape and photo sensitivity, Pentscosa-diynoic acid for EX Laser and w-Tricocynoic acid for X-ray were better than others. Using Pentacosa-diynoic acid LB-Films, 0.3 pm pattern could be fabricated by the EX stepper, the size of which is the theoretical resolution limit of our lens. On the other hand, using w-Tricocynoic acid, 0.4 pm pattern could be fabricated by the X-ray stepper, of which size is at the limitation of X-ray mask which could be fabricated at present. But, if the smaller patterns of X-ray mask could be fabricated, it will be possible to make them below 0.1 μm. So these technology will become useful surely for the fabrication of 64Mbit D-RAMs.
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K. Ogawa, K. Ogawa, H. Tamura, H. Tamura, M. Sasago, M. Sasago, T. Ishihara, T. Ishihara, "Langmuir-Blodgett Films For Half Micron Lithography Using Krf Excimer Laser And X-Ray", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); doi: 10.1117/12.940306; https://doi.org/10.1117/12.940306
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