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1 January 1987 Advances In 1:1 Optical Lithography
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Abstract
Numerous advancements based on the inherent simplicity and excellent optical correction of 1:1 broadband stepper lenses have occurred over the past year. This paper briefly touches on the lithographic requirements of various segments of the semiconductor industry and describes photolithographic developments that meet many of these requirements. Comparisons will be made between currently available 1:1 lenses with fields large enough to contain multiple four megabit DRAMs and a new lens with a resolution and field size sufficient to produce 16 megabit DRAMs. This new lens has a variable numerical aperture that allows it to achieve a minimum feature versus maximum field size tradeoff thereby accommodating different industry requirements. Important process parameters relating to process optimization and focus latitude for submicron lithography are discussed. Recently applied technologies such as voting lithography, that may be useful for device prototyping, are presented. Additionally, topics such as multiple field reticles for ASIC applications, improvements in 1X reticle technology, and improvements in overlay that will allow the next generation of DRAMs to continue to be produced in a multiple machine environment will also be discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Adonis C. Stephanakis and Daniel I. Rubin "Advances In 1:1 Optical Lithography", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967036
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