Tapered Wet Etching Of Contacts Using A Trilayer Silox Structure

Martin P. Karnett

doi:10.1117/12.967046

1 January 1987 Tapered Wet Etching Of Contacts Using A Trilayer Silox Structure

Martin P. Karnett

Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967046
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

A new trilayer sandwich structure has been developed to achieve tapered contact sidewalls and improved metal step coverage. Following furnace reflow of the conventional bilayer sandwich, undoped oxide is deposited across the wafer. When contact holes are wet etched through this trilayer sandwich, the sidewalls become well tapered with significant improvements in metal step coverage throughout the contact cuts. Incorporation of an additional undensified oxide layer over the existing bilayer sandwich has reduced the etch rate at the oxide/photoresist interface, improving metal step coverage and extending the utility of our wet etch without any change in etchant bath concentration or temperature.

Citation Download Citation

Martin P. Karnett "Tapered Wet Etching Of Contacts Using A Trilayer Silox Structure", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967046

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