1 January 1987 Tapered Wet Etching Of Contacts Using A Trilayer Silox Structure
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Abstract
A new trilayer sandwich structure has been developed to achieve tapered contact sidewalls and improved metal step coverage. Following furnace reflow of the conventional bilayer sandwich, undoped oxide is deposited across the wafer. When contact holes are wet etched through this trilayer sandwich, the sidewalls become well tapered with significant improvements in metal step coverage throughout the contact cuts. Incorporation of an additional undensified oxide layer over the existing bilayer sandwich has reduced the etch rate at the oxide/photoresist interface, improving metal step coverage and extending the utility of our wet etch without any change in etchant bath concentration or temperature.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin P. Karnett, Martin P. Karnett, "Tapered Wet Etching Of Contacts Using A Trilayer Silox Structure", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); doi: 10.1117/12.967046; https://doi.org/10.1117/12.967046
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