30 June 1987 A Model For Optimal Beamline Design For Synchrotron Radiation X-Ray Lithography
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Abstract
We present a new model capable of fully describing the image formation in X-ray Lithography with a Synchrotron Radiation source. All the relevant effects, such as beam size, scanning, transmittivity and reflectivity are included. The model itself can be used to predict the achievable resolution for a given process. It is applied to the discussion of a particular process, based on Hewlett Packard mask technology and using one of the Center beamlines, for which we show that resolution in the sub-0.25 micron region can be easily achieved. Solutions to the problem of anamorphicity are presented, as well a discussion of the optimum configuration for scanning.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. So, B. Lai, F. Cerrina, "A Model For Optimal Beamline Design For Synchrotron Radiation X-Ray Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940350; https://doi.org/10.1117/12.940350
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