30 June 1987 E-Beam Exposure Of Optical Resist For Mask Lithography
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Abstract
E-Beam resists such as PBS have been used successfully by the mask making industry for many years, however, PBS suffers from a few major disadvantages. These disadvantages include safety issues stemming from solvent processing, lack of latitude, particularly with respect to humidity during development, poor plasma durability and a long, many step process which increases the probability of added defects. This paper describes a process developed to utilize MP 2400-17 optical photoresist for electron beam mask lithography and presents production results achieved. The benefits of optical photoresist over conventional positive EB resists are aqueous processing, wide and controllable process latitude, plasma durability, increased resolution and lower achievable defect densities. In addition, E-Beam exposed optical photo resists can be processed to produce a high resolution negative image, potentially replacing COP. One major drawback is decreased exposure sensitivity. Although the required multi-write scans increase total write time, the averaging effect of multiple exposures do produce superior line edge definition and resolution for a given address unit size. An analysis is presented demonstrating that the reduced process time and complexity, coupled with increased yield, can more than offset the cost of increased write time.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph Mitchell, Joseph Mitchell, David M. Walker, David M. Walker, } "E-Beam Exposure Of Optical Resist For Mask Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940365; https://doi.org/10.1117/12.940365
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