Paper
30 June 1987 High Throughput And Accuracy X-Ray Stepper With Plasma Source
A. Une, M. Suzuki, I. Okada, Y. Saitoh, H. Yoshihara
Author Affiliations +
Abstract
For the replication of submicron patterns with high throughput and high overlay accuracy, an x-ray stepper with a plasma source has been developed. The maintenance interval of the gas-puff z-pinch plasma source is 100 times better than that of the previous plasma source. The improvement is achieved by reducing electrode consumption and devising a new plasma remover. A single grating and double-pitch dual grating technique has been developed to align wafer to mask. The gap and lateral displacement between mask and wafer are detected by utilizing +1st-order diffraction light intensities. Their detection resolutions are less than 0.01pm. By combining this detection system with the conventional stages, an absolute gap accuracy of ±0.3μm and a lateral alignment servo accuracy of ±0.02μm have been achieved. Using this new x-ray stepper with the plasma source, a 0.3pm pattern has been replicated accurately in a maximum field of 30x3Omm at a throughput of 20 wafers per hour.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Une, M. Suzuki, I. Okada, Y. Saitoh, and H. Yoshihara "High Throughput And Accuracy X-Ray Stepper With Plasma Source", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940352
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KEYWORDS
Signal detection

Photomasks

Semiconducting wafers

Plasma

X-rays

Servomechanisms

Optical alignment

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