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30 June 1987 Production Efficiency And Intensity Distribution Of Pd X-Ray Source For Lithography
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Abstract
A technique to evaluate the X-ray intensity distribution on the wafer in an X-ray lithography system equipped with a conventional X-ray source with a Pd target was devised. A practical formula for the Pd L X-ray production efficiency, including parameters such as the incident electron beam energy, its incident angle, and the X-ray take-off angle was derived to develop a method of simulating the X-ray intensity distribution on the wafer. This simulation includes realistic factors such as the target shape, the profile and direction of the electron beam, and the X-ray absorption by the window and mask membrane. A good agreement between the calculated and the measured X-ray intensity distributions obtained in the application of this technique to a cone shaped target verified the usefulness of the technique in the design of Pd X-ray sources.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaki Yamabe, Yoshitaka Kitamura, Yasuo Furukawa, and Takefumi Inagaki "Production Efficiency And Intensity Distribution Of Pd X-Ray Source For Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940361
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