30 June 1987 Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography
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Abstract
This paper deals with the development of an X-ray stepper mask technology based on a rigid SiC.-membrane and a stress compensated W-absorber system. The SiC-mask blanks are being fabricated using batch processes like CVD-deposition and selective thin etching. As a result of extensive process optimization the polycristalline membranes can be fabricated with a smooth surface (< 40 nm) and a Young's modulus as high as the bulk value (4.6*10 11 N/m 2). Membranes of 2.7 μm in thickness are being prepared routinely with excellent transparency for synchrotron and optical radiation. For a high X-ray absorption and low thermal expansion sputter deposited tungsten has been applied. Ihe proposed stress compensating technique enables absorber stresses of less than 1*107 N/m , resulting in a mask distortion of < 100 nm. Precise sub-0.5-micron pattern with steep profiles have been generated by use of e-beam lithography and RIE techniques. High doses SOR experiments indicate an excellent long-term stability of SiC-W-masks.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Luthje, H. Luthje, B. Matthiessen, B. Matthiessen, M. Harms, M. Harms, A. Bruns, A. Bruns, "Status And Prospects Of Sic-Masks For Synchrotron Based X-Ray Lithography", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940348; https://doi.org/10.1117/12.940348
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