30 June 1987 Sub-Half Micrometer Resist Processes For The Aeble-150
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Abstract
Recent results in the development of positive and negative resist processes for use with the AEBLE-150 electron beam lithography system are discussed, detailing techniques used for the evaluation and modeling of resist performance. Specific results for RD-2000N, a negative resist available commercially from the Hitachi Corporation, are presented demonstrating processes suitable for use with the AEBLE-150 for feature sizes below 0.5μm. In addition, results of processes with high resolution imaging in thick layers of PMMA are presented.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. D. Coyne, R. D. Coyne, O. W. Otto, O. W. Otto, } "Sub-Half Micrometer Resist Processes For The Aeble-150", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940369; https://doi.org/10.1117/12.940369
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