30 June 1987 X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks
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Abstract
Boron nitride membranes (produced through chemical vapor deposition of diborane and ammonia) have been exposed to synchrotron radiation and have showed severe degradation in optical properties after absorbing doses on the order of 200kJ/cm3. Damage kinetics are described as well as measurements made to identify the damage mechanism. Preliminary results on associated mechanical damage are also presented. Boron nitride membranes (produced through the pyrolysis of borazine), silicon nitride and silicon membranes exposed and tested in the same manner showed no such degradation.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul King, Paul King, Lawrence Pan, Lawrence Pan, Piero Pianetta, Piero Pianetta, Alex Shimkunas, Alex Shimkunas, Philip Mauger, Philip Mauger, Daniel Seligson, Daniel Seligson, } "X-Ray Induced Damage In Boron Nitride, Silicon, And Silicon Nitride Lithography Masks", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); doi: 10.1117/12.940362; https://doi.org/10.1117/12.940362
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