1 September 1987 Photoablation Of Resist Coated Alignment Targets To Improve VLSI Pattern Overlay
Author Affiliations +
The reduction in VLSI feature dimensions has progressed at a rapid rate. Dynamic memory circuit complexity has doubled every year and a half over the past twenty years. A large percentage of these circuits' complexity improvement can be directly attributed to improved optical exposure tools and photoresist processing.. Optical exposure tools have extended microlithography well into the submicrometer regime by reducing the exposing wavelength and increasing the numerical aperture. Another key factor in extending resolution capabilities and proess latitude is the introduction of higher gamma, resist processes. For example, contrast enhancing materials (CEM) can effectively increase the resist gamma by a factor of two to three.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Elliott, David J. Elliott, Kenneth J. Polasko, Kenneth J. Polasko, Bernhard P. Piwczyk, Bernhard P. Piwczyk, Ernest W. Balch, Ernest W. Balch, } "Photoablation Of Resist Coated Alignment Targets To Improve VLSI Pattern Overlay", Proc. SPIE 0774, Lasers in Microlithography, (1 September 1987); doi: 10.1117/12.940403; https://doi.org/10.1117/12.940403


Practical I-Line Lithography
Proceedings of SPIE (August 19 1986)
Patterning ULSI circuits
Proceedings of SPIE (May 20 1996)
Present status and technical issues of x-ray lithography
Proceedings of SPIE (August 31 1998)
Patterning ULSI circuits
Proceedings of SPIE (May 26 1996)
Overlay Tolerances For Vlsi Using Wafer Steppers
Proceedings of SPIE (December 31 1987)

Back to Top