17 April 1987 Analysis Of Linewidth Measurement Techniques Using The Low Voltage SEM
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Proceedings Volume 0775, Integrated Circuit Metrology, Inspection, & Process Control; (1987); doi: 10.1117/12.940413
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States
Abstract
Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary and backscattered electron signal generated by that structure1-6. Thus, an accurate measurement requires an understanding of how the profile and critical dimension of the line being measured relate to the electron signal. The complicating factor is that different features generate different signals and that surroundings often influence the detected signal from a given feature.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. G. Rosenfield, "Analysis Of Linewidth Measurement Techniques Using The Low Voltage SEM", Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940413; http://dx.doi.org/10.1117/12.940413
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KEYWORDS
Scanning electron microscopy

Aluminum

Signal detection

Photomicroscopy

Silicon

Sensors

Signal generators

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