17 April 1987 Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques
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Abstract
The results of varying dry polysilicon etch process parameters are presented. Techniques used to study and interpret the results are electrical linewidth measurement and thin film thickness measurement. Conclusions are drawn about the suitability of the process for specific design rule considerations, and the tolerance of the parameters involved.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roger Patrick, Beth Arden, "Plasma Etch Characterization Using Electrical Iinewidth Measuring Techniques", Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940430; https://doi.org/10.1117/12.940430
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