17 April 1987 Subnanometer-Precision SEM Measurements Of Proximity Effects In Contrast-Enhanced Lithography
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An electron beam metrology system has been used to study optical proximity effects in contrast-enhanced lithography. In this case, precision and differential measurement capability were found to be more important than absolute accuracy. Our results show distinct proximity effects due to retarded bleaching of the contrast enhancement layer over the smaller features and some additional anomalous effects which have been attributed to subtle changes in edge morphology. SEM micrographs of line-and-space patterns revealed sloped profiles at the smallest geometries near the Rayleigh limit of the exposure tool. Intermediate geometries had vertical profiles, and larger ones were re-entrant. Successful use of contrast enhancement for 0.7um CMOS devices required optimization of the process around a single critical dimension below one micrometer.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin M. Monahan, Kevin M. Monahan, Michael A. Blanco, Michael A. Blanco, } "Subnanometer-Precision SEM Measurements Of Proximity Effects In Contrast-Enhanced Lithography", Proc. SPIE 0775, Integrated Circuit Metrology, Inspection, & Process Control, (17 April 1987); doi: 10.1117/12.940416; https://doi.org/10.1117/12.940416

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