Monolithic infrared imagers with Schottky-barrier detectors (SBDs) can be constructed with silicon VLSI technology into large and high density focal plane arrays (FPAs). This paper presents a brief review of the available Pd2Si and PtSi SBDs, of the reported SBD FPAs, and of the general consideration for the construction of high fill-factor and high-density monolithic FPAs. The four FPA multiplexer architecture reviewed are: an interline transfer CCD, a charge sweep device, a column-readout MOS, and a row-readout MOS.
Walter F. Kosonocky,
Gary W. Hughes,
""High Fill Factor Silicide Monolithic Arrays"", Proc. SPIE 0782, Infrared Sensors and Sensor Fusion, (24 September 1987); doi: 10.1117/12.940565; https://doi.org/10.1117/12.940565