24 September 1987 Statistical Characterization Of A Large PtSi Focal Plane Array
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Abstract
Schottky barrier diode charge coupled device infrared focal plane arrays exist with thousands of pixel elements. Fabrication of these large 2-D imagers is made possible by the simple design of the unit cell which can be repeated using modern CAD equipment as well as the maturity of the -2μm silicon process. Large 2-D imagers of the kind will invariably have different characteristics than their 1-D (-500 pixel element) scanning counterparts. The quantity of pixels in the Schottky array makes their characterization on a one by one basis an intractable problem. Instead, statistics can be used to quantify the array performance on a global scale. The use of statistics simplifies the extraction of uniquely two dimensional imager characteristics and system parameters.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James E. Murguia, James E. Murguia, William S. Ewing, William S. Ewing, } "Statistical Characterization Of A Large PtSi Focal Plane Array", Proc. SPIE 0782, Infrared Sensors and Sensor Fusion, (24 September 1987); doi: 10.1117/12.940566; https://doi.org/10.1117/12.940566
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