Paper
9 November 1987 Detection Of Radio-Frequency Modulated Optical Signals By Two And Three Terminal Microwave Devices
K B Bhasin, R N Simons, S Wojtczuk
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Abstract
An interdigitated photoconductor (two terminal device) on GaA1As/GaAs heterostructure was fabricated and tested by an electro-optical sampling technique. Further, the photoresponse of GaA1As/GaAs HEMT (three terminal device) was obtained by illuminating the device with an optical signal modulated up to 8 GHz. Gain-bandwidth product, response time and noise properties of photoconductor and HEMT devices were obtained. Monolithic integration of these photodectors with GaAs microwave devices for optically controlled phased array antenna applications is discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K B Bhasin, R N Simons, and S Wojtczuk "Detection Of Radio-Frequency Modulated Optical Signals By Two And Three Terminal Microwave Devices", Proc. SPIE 0789, Optical Technology for Microwave Applications III, (9 November 1987); https://doi.org/10.1117/12.940720
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Gallium arsenide

Field effect transistors

Phased array optics

Microwave radiation

Sensors

Integrated optics

Signal detection

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