InGaAsP Buried Channel Waveguide For Electroabsorption Modulation

S C Lin; M K Chin; X L Jing; L M Walpita; P K. L Yu; W S.C Chang

doi:10.1117/12.940711

9 November 1987 InGaAsP Buried Channel Waveguide For Electroabsorption Modulation

S C Lin, M K Chin, X L Jing, L M Walpita, P K. L Yu, W S.C Chang

Proceedings Volume 0789, Optical Technology for Microwave Applications III; (1987) https://doi.org/10.1117/12.940711
Event: 1987 Technical Symposium Southeast on Optics, Electro-Optics, and Sensors, 1987, Orlando, FL, United States

Abstract

External modulation of 1.3 μm laser light with LPE grown InGaAsP/InP buried channel waveguides is presented. The waveguide is compatible with single mode fiber and the planar structure has potential for monolithic integration. In this paper, a numerical analysis of electroabsorption (EA) modulation for the waveguide modulator shows interesting results which may help the design of this device.

Citation Download Citation

S C Lin, M K Chin, X L Jing, L M Walpita, P K. L Yu, and W S.C Chang "InGaAsP Buried Channel Waveguide For Electroabsorption Modulation", Proc. SPIE 0789, Optical Technology for Microwave Applications III, (9 November 1987); https://doi.org/10.1117/12.940711

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