9 November 1987 Planar GaAs Detector-Amplifier Circuits
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Abstract
Monolithic GaAs detector-amplifier channels and arrays have been fabricated for use in the 0.81 - 0.85 pm wavelength range. The circuits were fabricated using a multilayered GaAs/AlGaAs/GaAs structure grown on semi-insulating GaAs. The AlGaAs layer provided electrical isolation between the upper MESFET layer and the lower n- photoconductor layer. Typical rise times of discrete photoconductors in response to 0.84 μm wavelength optical exci-tation were in the range of 1.5 - 4 ns. Rise and fall times of integrated detector-amplifier single channel circuits of 9 ns and 28 ns, respectively, were observed in response to 0.84 pm optical excitation.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gordon Wood Anderson, Gordon Wood Anderson, Nicolas A Papanicolaou, Nicolas A Papanicolaou, David I Ma, David I Ma, Ingham A.G Mack, Ingham A.G Mack, Joh n A Modolo, Joh n A Modolo, Francis J Kub, Francis J Kub, Charles W Young, Charles W Young, Phillip E Thompson, Phillip E Thompson, John B Boos, John B Boos, } "Planar GaAs Detector-Amplifier Circuits", Proc. SPIE 0789, Optical Technology for Microwave Applications III, (9 November 1987); doi: 10.1117/12.940734; https://doi.org/10.1117/12.940734
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