11 August 1987 Electrical And Optical Properties Of Semiconductor Doping Superlattices
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940818
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
A short, elementary introduction into the physics of n-i-p-i doping superlattices is presented. Their electrical and optical properties which result from the unique tunability of their bandstructures are discussed. Examples of GaAs based n-i-p-i and hetero-n-i-p-i superlattices illustrate the novel phenomena that have been predicted and experimentally observed. The device potential of these engineered semiconductor materials is also discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Paul Ruden, P. Paul Ruden, } "Electrical And Optical Properties Of Semiconductor Doping Superlattices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940818; https://doi.org/10.1117/12.940818

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