11 August 1987 Epitaxial Semiconductor Optical Interference Devices
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940839
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
A new class of single-crystal, semiconductor optical interference devices is described. The basic physics governing their operation and materials and growth methods to implement them are summarized. Recent experimental results for epitaxial optical filters, monolithic integration, and tunability are discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. L. Gourley, R. M. Biefeld, T. J. Drummond, T. E. Zipperian, "Epitaxial Semiconductor Optical Interference Devices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940839; https://doi.org/10.1117/12.940839

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