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11 August 1987 Exciton Binding Energy In Type-II GaAs-AlAs Quantum Well Heterostructures
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940833
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Envelope function calculations indicate that the GaAs-AlAs band edge configuration changes from a straddled, type-I line-up to a staggered, type-II arrangement when the GaAs width is below about 32Å. The binding energy of the ground state exciton is calculated variationally for this heterojunction arrangement. Anisotropy in both electron and hole effective masses is considered and calculations performed assuming perfect confinement of both sorts of carriers. Calculated binding energies are of a similar magnitude to those of the is heavy hole exciton for this materials system when its band edge configuration is the more familiar type-I.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Duggan and H. I. Ralph "Exciton Binding Energy In Type-II GaAs-AlAs Quantum Well Heterostructures", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); https://doi.org/10.1117/12.940833
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