11 August 1987 Experimental Determination Of Exciton Binding Energies In GaAs/AlGaAs Quantum Wells
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940853
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We report the observation, in the low temperature photoluminescence excitation spectra of high quality GaAs/AlGaAs single quantum wells, of distinctive peaks arising from the first excited level (2s) in addition to the ground state (1s) of heavy- and light-hole excitons. We utilize the accurate determination of the 2s-1s splitting energy, made possible by this observation, to derive the binding energies of the heavy- and light-hole excitons as a function of well width and find good agreement with other similar determinations and with recent theoretical calculations based on models of quantum wells with valence band coupling. The agreement with exciton binding energies derived from magneto-optical spectroscopic experiments is unsatisfactory and suggests that further work in the interpretation of the magneto-optical experimental spectra is required.
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Emil S. Koteles, Emil S. Koteles, J. Y. Chi, J. Y. Chi, } "Experimental Determination Of Exciton Binding Energies In GaAs/AlGaAs Quantum Wells", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940853; https://doi.org/10.1117/12.940853
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