11 August 1987 Non-Ideal Quantum Well Structures
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940850
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
he optical gain and quality of the light emitted in a quantum well structure are analysed in the presence of (a) optical, electrical and thermal couplings between adjacent wells, (b) tunnel leakage, (c) non-radiative and radiative interface recombinations, (d) lattice mismatch, (e) inhomogenity of the layers, (f) ratio of the width of the well to that of the barrier and (g) number of wells. It is felt that the thermalisation of the carriers through collisions with phonons is not necessarily an advantageous feature. Instead several alternatives like (i) mixed electrical and optical pumping mode techniques, (ii) creation of some metastable levels in the wells, (iii) longitudinal magnetic focussing or transverse magnetic deflection and (iv) several other junction pairs starting from GaAs/AlGaAs are discussed for illustrative purposes. Upconversion and mixing frequency techniques can be developed by impregnating barrier/well materials with slight additions of luminiphors as impurities.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. S. V. Gopalam, B. S. V. Gopalam, } "Non-Ideal Quantum Well Structures", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940850; https://doi.org/10.1117/12.940850

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