11 August 1987 Optical Absorption In Thin Amorphous Si/SiOx Multilayer Structures
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940847
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
We have prepared amorphous Si/SiOx thin multilayer structures by evaporation onto substrates at room temperature. A detaied study of the optical absorption coefficient for individual layer thicknesses in the range 1.5 to 10 nm has been undertaken. We find evidence for bandgap widening in the thinnest layer superlattices. Our results show, however, that the position of the absorption edge is sensitive to sample quality. Extensive modelling on this system demonstrates that the apparent edge is particularly sensitive to layer thickness variations, i.e. to aperiodicity in the superlattice structure.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Bittar, A. Bittar, O. Hunderi, O. Hunderi, H. J. Trodahl, H. J. Trodahl, } "Optical Absorption In Thin Amorphous Si/SiOx Multilayer Structures", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940847; https://doi.org/10.1117/12.940847

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