11 August 1987 Resonant Tunneling: Physics, New Transistors And Superlattice Devices
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987) https://doi.org/10.1117/12.940815
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Recent advances in quantum well (QW) tunneling devices are discussed. These include resonant tunneling (RT) bipolar and field effect transistors; infrared lasers and detectors based on sequential RT and superlattice effective mass filters.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Federico Capasso, Federico Capasso, Susanta Sen, Susanta Sen, A. Y. Cho, A. Y. Cho, } "Resonant Tunneling: Physics, New Transistors And Superlattice Devices", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987); doi: 10.1117/12.940815; https://doi.org/10.1117/12.940815
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