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11 August 1987 Temperature Dependent Optical Studies Of GaAs/AlGaAs Single Quantum Wells
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Proceedings Volume 0792, Quantum Well and Superlattice Physics; (1987)
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
We report on detailed photoluminescence (PL) and photoluminescence excitation (PLE) studies of GaAs/A1GaAs single quantum wells (SQW) with differing well widths measured over temperatures ranging from 5K to 300K. A new trapping phenomenon was observed at low temperatures, which affects the linewidth and PL intensities (radiation lifetimes) of free excitons in the SQWs and which is related to the formation of bound excitons. At higher temperatures, excitonic linewidths were primarily broadened by optical phonon scattering. The temperature dependencies of the excitonic energies of SQWs were similar to that of bulk material and were independent of the quantum well width.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. J. Chen, Emil S. Koteles, Johnson Lee, J. Y. Chi, and B. S. Elman "Temperature Dependent Optical Studies Of GaAs/AlGaAs Single Quantum Wells", Proc. SPIE 0792, Quantum Well and Superlattice Physics, (11 August 1987);

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