3 August 1987 Picosecond Dynamics Of Dense Electron-Hole Plasmas In InGaAsP Films
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Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987) https://doi.org/10.1117/12.940882
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The dynamics of dense electron-hole plasmas in submicron thick films of InGaAsP are studied by time-resolved absorbance and photoluminescence techniques. The plasmas are created by excitation with a 0.5 ps optical pulse, and have initial densities between 5x 1020 and 1 x 1018 cm-3. At these high initial densities, significant band filling is observed. The plasma cools rapidly within ~1 ps. The plasma density then decays by rapid spatial expansion driven by the Fermi pressure of the plasma, until a density of ~6x1018 cm-3 is reached. In this initial phase, plasma expansion is much more rapid than Auger recombination. Subsequently, the plasma decays by a combination of Auger and bimolecular radiative recombination. Band gap renormalization and generation of acoustic phonons resonant with the thickness of the thin films are also observed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Wiesenfeld, J. M. Wiesenfeld, A. J. Taylor, A. J. Taylor, } "Picosecond Dynamics Of Dense Electron-Hole Plasmas In InGaAsP Films", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940882; https://doi.org/10.1117/12.940882
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