3 August 1987 Recombination Dynamics In Microstructures
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Proceedings Volume 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors; (1987); doi: 10.1117/12.940860
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Recombination dynamics in 111-V quantum well structures have been investigated using a wide variety of optical techniques. Results of these studies have a number of implications for the design of light-emitting devices.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. E. Fouquet, "Recombination Dynamics In Microstructures", Proc. SPIE 0793, Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors, (3 August 1987); doi: 10.1117/12.940860; https://doi.org/10.1117/12.940860
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KEYWORDS
Quantum wells

Light emitting diodes

Metalorganic chemical vapor deposition

Excitons

Gallium arsenide

Semiconductors

Aluminum

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