22 April 1987 Comparative Responses Of Electroreflectance And Photoreflectance In Gaas
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940897
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Photoreflectance (PR) and electroreflectance (ER) responses were compared on samples of GaAs in order to establish a detailed relation between the two techniques. The majority of experiments were made on an n-GaAs Schottky Barrier in the vicinity of the fundamental edge (1.4 eV). PR spectra were studied as a function of DC bias with the modulation obtained by chopped laser radiation. A complementary set of ER measurements were made over the same bias range, and a comparison was made of ER response with and without CW laser illumination. This yielded a direct relationship between CW laser power and an equivalent effective bias representing the laser irradiation reduction of the band bending. The correspon-dence between ER and PR allowed us to calculate the average electric field in the depletion layer based on the Franz-Keldysh oscillations present in both spectra. Aspnes and Studna (1973) have shown that the slope of the plot of the energy value of the oscillation extremum index n yields the average electric field provided that the interband effective masses are known. This result indicates that PR can determine submerged interfacial fields with-out any electrical contact to the sample.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Glosser, N. Bottka, "Comparative Responses Of Electroreflectance And Photoreflectance In Gaas", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940897; https://doi.org/10.1117/12.940897
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