22 April 1987 Comparative Responses Of Electroreflectance And Photoreflectance In Gaas
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940897
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
Photoreflectance (PR) and electroreflectance (ER) responses were compared on samples of GaAs in order to establish a detailed relation between the two techniques. The majority of experiments were made on an n-GaAs Schottky Barrier in the vicinity of the fundamental edge (1.4 eV). PR spectra were studied as a function of DC bias with the modulation obtained by chopped laser radiation. A complementary set of ER measurements were made over the same bias range, and a comparison was made of ER response with and without CW laser illumination. This yielded a direct relationship between CW laser power and an equivalent effective bias representing the laser irradiation reduction of the band bending. The correspon-dence between ER and PR allowed us to calculate the average electric field in the depletion layer based on the Franz-Keldysh oscillations present in both spectra. Aspnes and Studna (1973) have shown that the slope of the plot of the energy value of the oscillation extremum index n yields the average electric field provided that the interband effective masses are known. This result indicates that PR can determine submerged interfacial fields with-out any electrical contact to the sample.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Glosser, R. Glosser, N. Bottka, N. Bottka, } "Comparative Responses Of Electroreflectance And Photoreflectance In Gaas", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940897; https://doi.org/10.1117/12.940897
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