22 April 1987 Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-GaAs
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940913
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have investigated symmetry forbidden longitudinal optic Raman scattering for various polarization configurations at 4579A from the <100> surface of heavily doped n-GaAs caused by the strong surface-fields and high impurity levels. We have evaluated the magnitude and phase of the coefficient of the electric-field induced term as well as the magnitude of the coefficient of the impurity-induced factor. The former parameter may be very useful for the contactless evaluation of space charge electric fields in GaAs.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Shen, H. Shen, P. Parayanthal, P. Parayanthal, Fred H. Pollak, Fred H. Pollak, R. N. Sacks, R. N. Sacks, G. Hickman, G. Hickman, "Electric Field And Impurity-Induced Symmetry Forbidden Lo Phonon Raman Scattering In Heavily Doped <100> N-GaAs", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940913; https://doi.org/10.1117/12.940913
PROCEEDINGS
5 PAGES


SHARE
Back to Top