22 April 1987 Electroreflectance And Photoreflectance Characterization Of The Space Charge Region In Semiconductors: Ito/Inp As A Model System
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940896
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have investigated the electroreflectance (ER) and photoreflectance (PR) spectra from the space charge region (SCR) of the model Schottky barrier system indium-tin-oxide on p-InP (ITO/InP). Both ER and PR were studied as a function of reverse dc bias, Vbias. The observed Franz-Keldysh oscillations (FKO) provide a direct measure of the surface dc electric field, εsdc. In ER the ac modulating voltage (for small modulation) effects only the envelope of the FKO but not the period. A generalized Franz-Keldysh theory, taking into consideration large built-in dc fields, is presented which accounts for the above experimental results. From a plot of (Eac)2 as a function of Vbias we have obtained the built-in potential and net carrier concentration of the device. Our work demonstrates that electromodulation in Schottky barriers can be used as an optical Mott-Schottky method.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. N. Bhattacharya, R. N. Bhattacharya, H. Shen, H. Shen, P. Parayanthal, P. Parayanthal, Fred H. Pollak, Fred H. Pollak, T. Coutts, T. Coutts, H. Aharoni, H. Aharoni, } "Electroreflectance And Photoreflectance Characterization Of The Space Charge Region In Semiconductors: Ito/Inp As A Model System", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940896; https://doi.org/10.1117/12.940896
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