Paper
22 April 1987 Far Infrared Reflectance Spectroscopy Of AlAs-GaAs Microstructures
R. Sudharsanan, S. Perkowitz, S. S. Yom, T. J. Drummond
Author Affiliations +
Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940914
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We report infrared reflectance spectra in the range 100-450 cm-1 for an AlAs-GaAs heterostructure and three AlAs-GaAs superlattices with different periods. All the spectra clearly exhibit the TO phonon modes of pure GaAs and AlAs and a sharp interference peak at the GaAs LO frequency. The heterostructure data yield a set of phonon parameters for unoxidised AlAs. The superlattice spectra exhibit additional structure between 225 and 400 cm-1 and a broadening of the GaAs TO peak. The long wavelength superlattice optical theory of Agranovich and Kravtsov explains most of the features of the superlattice reflectivity.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Sudharsanan, S. Perkowitz, S. S. Yom, and T. J. Drummond "Far Infrared Reflectance Spectroscopy Of AlAs-GaAs Microstructures", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.940914
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Cited by 4 scholarly publications.
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KEYWORDS
Gallium arsenide

Superlattices

Reflectivity

Stereolithography

Heterojunctions

Infrared radiation

Phonons

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