22 April 1987 In Situ Ellipsometry Characterization Of The Growth Of Thin Film Amorphous Semiconductors
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Proceedings Volume 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices; (1987) https://doi.org/10.1117/12.940921
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
We have applied in situ ellipsometry to characterize the initial nucleation, interface structure, and surface roughness evolution of thin film hydrogenated amorphous silicon (a-Si:H) and related materials prepared both by rf glow discharge and by ion beam sputtering. Selected areas will be covered where in situ ellipsometry has made an impact on our understanding of the growth mechanisms for these thin films. The in situ measurements have been performed using a 3.4 eV incident probe beam. At this photon energy, a-Si:H is strongly absorbing, and the interpretation of the data is simplified since material only within the penetration depth of the light is probed. Topics to be discussed include: (1) the influence of deposition technique and parameters on the initial nucleation of a-Si:H on c-Si substrates. (2) the evolution of surface roughness in the later stages of growth of a-Si:H, and (3) the effect of deposition procedure on the interface properties of glow discharge amorphous silicon/amorphous silicon-nitrogen heterostructures.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. W. Collins, R. W. Collins, J. M Cavese, J. M Cavese, } "In Situ Ellipsometry Characterization Of The Growth Of Thin Film Amorphous Semiconductors", Proc. SPIE 0794, Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, (22 April 1987); doi: 10.1117/12.940921; https://doi.org/10.1117/12.940921
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